IRGBF30F |
RFQ for IRGBF30F Required Field |
 |
| Product | Manufacturers | Pack | D/C |
| IRGBF30F | - | TO-220 | 05+ |
Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET. They provide substantial benefits to a host of high-voltage, high- current applications.
Features |
| Switching-loss rating includes all "tail" lossesOptimized for medium operating frequency ( 1 to 10kHz) See Fig. 1 for Current vs. Frequency curve |
| Parameter | Max. | Units | |
| VCES | Collector-to-Emitter Voltage | 900 | V |
| IC @ TC = 25°C | Continuous Collector Current | 20 | A |
| IC @ TC = 100°C | Continuous Collector Current | 11 | |
| ICM | Pulsed Collector Current | 40 | |
| ILM | Clamped Inductive Load Current | 40 | |
| VGE | Gate-to-Emitter Voltage | ±20 | V |
| EARV | Reverse Voltage Avalanche Energy | 10 | mJ |
| PD @ TC = 25°C | Maximum Power Dissipation | 100 | W |
| PD @ TC = 100°C | Maximum Power Dissipation | 42 | |
| TJ TSTG |
Operating Junction and Storage Temperature Range |
-55 to +150 | °C |
| Soldering Temperature, for 10 sec. | 300 (0.063 in. (1.6mm) from case) | ||
| Mounting torque, 6-32 or M3 screw | 10 lbf*in (1.1N*m) |
